Frontiers in Electronics: Advanced Modeling of Nanoscale by Benjamin Iñiguez, Tor A Fjeldly

By Benjamin Iñiguez, Tor A Fjeldly

This publication contains 4 chapters to handle at diversified modeling degrees for various nanoscale MOS constructions (Single- and Multi-Gate MOSFETs). the gathering of those chapters within the publication are tried to supply a complete assurance at the diverse degrees of electrostatics and shipping modeling for those units, and relationships among them. particularly, the difficulty of quantum delivery techniques, analytical predictive 2D/3D modeling and design-oriented compact modeling. it may be of pursuits to researchers engaged on modeling at any point, to supply them with a transparent rationalization of theapproaches used and the hyperlinks with modeling options for both greater or decrease degrees.

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Frontiers in Electronics: Advanced Modeling of Nanoscale Electron Devices

This e-book includes 4 chapters to deal with at assorted modeling degrees for various nanoscale MOS constructions (Single- and Multi-Gate MOSFETs). the gathering of those chapters within the booklet are tried to supply a finished insurance at the various degrees of electrostatics and delivery modeling for those units, and relationships among them.

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As Figure18-(right) shows, when the confinement direction is (110), subbands are closer each other than in (100) case and the inter-subband scattering increases. Thus, the impact of phonon scattering should be higher in (110) oriented devices. (2) The change in the driving force calculated from the derivative of the energy profile as mentioned before. Fig. 19. Drain current for different channel orientations. Highest drain current is obtained for (100)/<110> (red). Transport mass anisotropy is shown for (110) results.

It is indeed possible, in principle, to further enhance the injection velocity by reducing the virtual source density of states (DOS), a procedure sometimes referred to as “subband engineering”26. Indeed, for the same amount of charges, states of higher energy would be more populated in a lower DOS than in a larger DOS device19. Several strategies are possible to reduce channel DOS. The first one would consist in reducing the number of populated subbands at the virtual source, by enhancing confinement.

22. C. 2703-2710 (2006). 23. M. V. Fischetti and S. E. Laux, “Monte Carlo Study of Electron Transport in Silicon Inversion Layers”, Physical Rev. B, 48, no. 4, pp. 2244-2274 (1993). 24. J. Saint-Martin, A. Bournel, F. Monsef, C. Chassat, and P. Sci. , 21, pp. 29-31, (2006). 25. I. Riolino, M. Braccioli, L. Lucci, D. Esseni, C. Fiegna, P. Palestri, and L. Selmi, “MonteCarlo Simulation of Decananometric Double-Gate SOI devices: Multi-Subband vs. 3DElectron Gas with Quantum Corrections”, in Proceedings of the 36th European Solid-State Device Research Conference, 2006.

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